The 2009 NAB Show Booth N2502  

NAB White Paper: The application of new LD-MOS technology to a UHF Multimedia Transmitter Design

by Martyn Horspool

For the past 10 years, 28 to 32 volt Lateral Diffused Metal Oxide Silicon (LDMOS) FET devices have become the technology of choice for high power linear amplifiers for broadcast RF amplifier applications. Advantages, including ruggedness, reliability and linearity have already been well proven. Recently developed, high-power, 50 volt, LD-MOS FET devices have now become available for the UHF television broadcast band (470 – 862MHz). This paper addresses the application of these new 50 volt high power LDMOS devices in a new transmitter design.

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